Enhanced permanent degradation of organic TFT under electrical stress and visible light exposure

被引：8
|
作者：
Wrachien, N. [1 ]
Bari, D. [1 ]
Kovac, J. [2 ]
Jakabovic, J. [2 ]
Donoval, D. [2 ]
Meneghesso, G. [1 ]
Cester, A. [1 ]
机构：
[1] Univ Padua, Dept Informat Engn, Padua, Italy
[2] Slovak Univ Technol Bratislava, Inst Elect & Photon, Bratislava 81219, Slovakia
来源：
MICROELECTRONICS RELIABILITY | 2012年 / 52卷 / 9-10期
关键词：
THIN-FILM TRANSISTORS; BIAS STRESS; PERFORMANCE; MOBILITY;
D O I：
10.1016/j.microrel.2012.06.055
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We subjected OTFTs to electrical stress under various illumination conditions, in the visible-light range. Negligible intrinsic degradation is observed without stress and light permanent effects of light without stress on OTFT properties are very modest. When light and stress are applied simultaneously, the degradation is much stronger, than stress alone. We found that the acceleration factor is over 2 if blue light is shed on the devices. (C) 2012 Elsevier Ltd. All rights reserved.
引用
收藏
页码：2490 / 2494
页数：5
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