Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing

被引：0

作者：

Mo, QW ^{[1
]}

Fan, TW ^{[1
]}

Gong, Q ^{[1
]}

Wu, J ^{[1
]}

Wang, ZG ^{[1
]}

Bai, YQ ^{[1
]}

Zhang, W ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, Lab Semicond Mat Sci, Beijing 100083, Peoples R China

来源：

1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS | 1998年

关键词：

D O I：

10.1109/ICSICT.1998.785971

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-organized InAs quantum; dots sheets are grown on GaAs(100) substrate and tapped by 80nm GaAs layer with molecular beam epitaxy. Samples were annealed and characterized with Raman spectra, transmission electron microscopy (TEM) and photolumincscence (PL). The Raman spectra indicates arsenic clusters in the GaAs capping layer. The TEM analysis revealed the relaxation of strain in some InAs islands with the introduction of the network of 90 dislocations. In addition, the structural changes also lead to the changes of the PL spectra from me InAs islands. Their correlation was discussed, Our results suggest:est that annealing may be used to intentionally modify me properties of self-organized InAs islands on GaAs.

引用

页码：641 / 644

页数：4

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