S-N border instability, magnetic flux trapping and cumulative effect during pulsed S-N switching of high quality YBaCuO thin films

被引:4
|
作者
Kiprijanovic, O. [1 ]
Ardaravicius, L. [1 ]
Gradauskas, J. [1 ]
Simkevicius, C. [1 ]
Kersulis, S. [1 ]
Asmontas, S. [1 ]
机构
[1] Ctr Phys Sci & Technol, Sauletekio Ave 3, LT-10257 Vilnius, Lithuania
来源
SUPERCONDUCTOR SCIENCE & TECHNOLOGY | 2020年 / 33卷 / 09期
关键词
II-type superconductivity; YBaCuO thin films; pulsed S-N switching; S-N border; bending instabilities; cumulative effect; RAYLEIGH-TAYLOR; PROPAGATION; FIELD;
D O I
10.1088/1361-6668/aba351
中图分类号
O59 [应用物理学];
学科分类号
摘要
Unexpected irreversible damage appeared in samples while investigating pulsed S-N switching in YBaCuO thin films. Examination of a scanning electron microscope image of a damaged film containing a defect revealed a step-like motion of the N-zone. Restoration of crack movement dynamics points to the formation of coherent jets. This would mean that cumulative convergence of unknown incompressible media took place. The known model of an edge barrier, when the S-N border, characterized by width lambda(eff), bounds a semi elliptical N-zone at the film edges, was applied for clarification of the cumulative convergence. In that model, counteracting forces cause a wave-like unstable form of the barrier S-N border, and further current growth increases the amplitude of wave-like distortions of the border. Then, current reconnection separates bulges from the N-zone and induces the appearance of the circular currents with a trapped magnetic flux. Heat release at the places with trapped flux cause an expansion in these locations and coherent jets originate from touch points due to cumulative convergence. We substantiate that specific properties of the S-N border at lambda(eff), such as high tensile strength, very high flexibility and also incompressibility, are responsible for the appearance of the cumulative effect. Thus, the N-zone propagation into S state begins by motion of the wave-like border. The non-damaging step-like N-zone propagation into the films without defects is clarified. It is concluded that both the critical current and the damage current are determined by the same barrier with the unstable S-N border, and, therefore, the irreversible damage of the films comes quickly after the current reaches the critical value.
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页数:8
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  • [1] Detailed look into the unstable S-N border during propagation of the N-zone into the thin YBaCuO film
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  • [2] FLUX-FLOW DURING HIGH-POWER NANOSECOND S-N SWITCHING IN THIN HIGH-T-C FILMS
    BALEVICIUS, S
    BICIUNAS, A
    BUTKUTE, R
    LISAUSKAS, V
    VENGALIS, B
    BRAZDEIKIS, A
    FLODSTROM, A
    IEEE TRANSACTIONS ON MAGNETICS, 1993, 29 (06) : 3589 - 3591
  • [3] GRAIN-BOUNDARY EFFECT ON THE MAGNETIC-FLUX CAPTURE AND PLASTICITY CHANGE DURING S-N TRANSITION
    PUSTOVALOV, VV
    SIRENKO, VA
    FOMENKO, VS
    FIZIKA TVERDOGO TELA, 1983, 25 (03): : 867 - 869
  • [4] A PHENOMENOLOGICAL APPROACH TO THE SUPERCONDUCTING TRANSITION IN THIN-FILMS AND S-N SUPERLATTICES
    GUYER, R
    KUMAR, P
    MISHRA, SG
    OBUKHOV, S
    SUN, Y
    PHYSICA C, 1992, 195 (3-4): : 263 - 268
  • [5] The electrical instabilities during ultra-fast S-N switching in high-T-c thin film microstrip
    Balevicius, S.
    Anisimovas, F.
    Balciunas, V.
    Butkute, R.
    Vengalis, B.
    Flodstrom, A. S.
    PHYSICA C-SUPERCONDUCTIVITY AND ITS APPLICATIONS, 1994, 235-40 : 3377 - 3378
  • [6] Threshold intensity of microwave emission induced S-N transitions of HTSC thin films
    Pukhov, AA
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1996, 22 (12): : 55 - 59
  • [7] Effect of surface roughness on step-wise S-N characteristics in high strength steel
    Itoga, H
    Tokaji, K
    Nakajima, M
    Ko, HN
    INTERNATIONAL JOURNAL OF FATIGUE, 2003, 25 (05) : 379 - 385
  • [9] Digital phase-shifter based on the S-N transition in high-Tc superconducting films
    Sherman, V
    Gaidukov, M
    Razumov, S
    Vendik, I
    Bolioli, S
    Dirassen, B
    ELECTRONICS LETTERS, 1997, 33 (01) : 62 - 64
  • [10] Threshold intensity of microwave radiation for inducing the S-N transition in a high-temperature superconductor thin film
    Pukhov, A. A.
    Technical Physics Letters, 22 (06):