Adsorption and decomposition of H2S on InP(100)

被引：12
|
作者：
Hung, WH
Chen, HC
Chang, CC
Hsieh, JT
Hwang, HL
机构：
[1] Synchrotron Radiat Res Ctr, Hsinchu 30077, Taiwan
[2] Natl Taiwan Univ, Dept Chem, Taipei 10764, Taiwan
[3] Natl Tsing Hua Univ, Dept Elect Engn, Hsinchu 300, Taiwan
来源：
JOURNAL OF PHYSICAL CHEMISTRY B | 1999年 / 103卷 / 18期
关键词：
D O I：
10.1021/jp984629o
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The adsorption and thermal reaction of H2S on the InP(100) surface is studied by synchrotron radiation (SR) soft X-ray photoelectron spectroscopy. In addition to molecular adsorption, H2S decomposes to form the dissociative species of S, HS, and H on the surface at 100K: The S atom of the sulfide species preferentially bonds to the In atom, and the H atom generated by the H2S dissociation bonds to the P atom. H2S molecules may physisorb on the surface in the form of an icelike multilayer/cluster at low temperatures, even at low coverages. The irradiation of SR white light can induce an alternative reaction of H2S with the InP surface to form a thicker sulfur layer than that obtained by thermal deposition. The resulting sulfur layer may provide chemical protection for the InP substrate from further reaction.
引用
收藏
页码：3663 / 3668
页数：6
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