UV electroluminescence emission from ZnO light-emitting diodes grown by high-temperature radiofrequency sputtering

被引：625
|
作者：
Lim, Jae-Hong [1 ]
Kang, Chang-Ku [1 ]
Kim, Kyoung-Kook [1 ]
Park, Il-Kyu [1 ]
Hwang, Dae-Kue [1 ]
Park, Seong-Ju [1 ]
机构：
[1] Gwangju Inst Sci & Technol, Dept Mat Sci & Engn, Kwangju 500712, South Korea
来源：
ADVANCED MATERIALS | 2006年 / 18卷 / 20期
关键词：
D O I：
10.1002/adma.200502633
中图分类号：
O6 [化学];
学科分类号：
0703 ;
摘要：
A UV-Iight-emitting homojunction ZnO LED is grown by radiofrequency sputtering at high temperature, improving the structural, electrical, and optical properties of the n- and p-type ZnO layers. The figure shows a comparison of the electroluminescence spectra of A) a p-n homojunction ZnO LED and B) a ZnO LED with Mg0.1Zn0.9O layers used as energy barrier layers. Such materials are of interest for their potential use in long-lifetime solid-state lighting, high-density information storage, secure communication, and chemical/biological-agent monitoring.
引用
收藏
页码：2720 / +
页数：6
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