Electrothermal Modeling of Microwave and RF PIN Diode Switch and Attenuator Circuits

被引：0
|
作者：
Caverly, Robert H. [1 ]
Khan, Shahriar [1 ]
机构：
[1] Villanova Univ, Dept Elect & Comp Engn, Villanova, PA 19085 USA
来源：
2013 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST (IMS) | 2013年
关键词：
p-i-n diodes; electrothermal effects; temperature; SPICE; microwave circuits; microwave diodes;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
This paper describes a time-domain electrothermal model for the microwave and RF p-i-n diode showing its usefulness in the design of PIN diode-based RF attenuator circuits over wide ambient temperature changes. The paper provides an overview of thermal variations on RF attenuation in PIN diode circuits and verifies this phenomenon with measurements on a series-reflective attenuator. These measured results compare favorably with the electrothermal model and provide circuit designers the insight needed to simulate and design temperature compensation circuits in timedomain simulators such as SPICE.
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页数：4
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