Optimum GeSbSe layer design with respect to transmission and thickness

被引：1

作者：

Nedelcu, Nicoleta ^{[1
]}

Chiroiu, Veturia ^{[1
]}

Munteanu, Ligia ^{[1
]}

机构：

[1] Romanian Acad, Inst Solid Mech, Bucharest, Romania

来源：

OPTICAL ENGINEERING | 2021年 / 60卷 / 03期

关键词：

chalcohenide layers; optimization layer; optical properties; optoelectronic devices;

D O I：

10.1117/1.OE.60.3.035109

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Compared to the rapid development of design methods, the optimization of the GeSbSe layer design is still lagging behind. Accordingly, the layer design should be acceptable for existing methods. Optimum selection of GeSbSe layer design in connection to transmission and thickness choice is discussed. The GexSb40-xSe60 (x = 12, 25, and 30 at.%) were synthesized from elements with 5N purity (Ge, Sb, and Se) using the conventional melt-quenching method. The experimental measurements are obtained in spectral range 250 to 1700 nm using spectrophotometer UV-VIS Lambda correlated with theoretical simulation obtained by OpenFilters. OpenFilters allows the creation of a material with higher transmission and low thickness for the possible applications in infrared transmitting filters and three-level phase-change memory. (C) 2021 Society of Photo-Optical Instrumentation Engineers (SPIE)

引用

页数：12

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