Water adsorption on UHV cleaved InP(110) surfaces

被引：28
|
作者：
Henrion, O
Klein, A
Jaegermann, W [1 ]
机构：
[1] Tech Univ Darmstadt, Dept Mat Sci, D-64287 Darmstadt, Germany
[2] Hahn Meitner Inst Berlin GmbH, Dept Chem Phys, D-14109 Berlin, Germany
来源：
SURFACE SCIENCE | 2000年 / 457卷 / 1-2期
关键词：
chemisorption; surface electronic phenomena (work function; surface potential; surface states; etc.); synchrotron radiation photoelectron spectroscopy;
D O I：
10.1016/S0039-6028(00)00417-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
H2O was adsorbed onto n-InP(110) cleavage planes at 100 K and its interaction with the surface was investigated by SXPS and LEED. H2O is dissociatively adsorbed at low coverages forming In-OH and P-H bonds, which lead to pinning acceptor states close to midgap. At higher coverages H2O is molecularly adsorbed and flat band potential is retained. During annealing first the molecularly adsorbed H2O desorbs and afterwards the surface rearranges to form an In suboxide. The oxidized surface shows Fermi level pinning at E-F-E-VB = 0.9 eV. (C) 2000 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：L337 / L341
页数：5
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