Microscopic characterization of ablation craters produced by femtosecond laser pulses

被引：5

作者：

Temnov, VV ^{[1
]}

Sokolowski-Tinten, K ^{[1
]}

Stojanovic, N ^{[1
]}

Kudryashov, S ^{[1
]}

von der Linde, D ^{[1
]}

Kogan, B ^{[1
]}

Schlarb, A ^{[1
]}

Weyers, B ^{[1
]}

Möller, R ^{[1
]}

Seekamp, J ^{[1
]}

Sotomayor-Torres, C ^{[1
]}

机构：

[1] Univ Essen Gesamthsch, Inst Laser & Plasma Phys, D-45117 Essen, Germany

来源：

HIGH-POWER LASER ABLATION IV, PTS 1 AND 2 | 2002年 / 4760卷

关键词：

laser ablation; laser surface modification;

D O I：

10.1117/12.482062

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The formation of well-defined craters is a general feature of laser ablation with ultrashort laser pulses, indicative of a sharp ablation threshold. Results of a microscopic characterization of ablation craters on semiconductors after irradiation with single intense ultrashort laser pulses are presented.

引用

页码：1032 / 1039

页数：8

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