A high-voltage monolithic isolator for a communication network interface

被引:13
|
作者
Akiyama, N [1 ]
Kojima, Y
Nemoto, M
Yukutake, S
Iwasaki, T
Amishiro, M
Kanekawa, N
Watanabe, A
Takeuchi, Y
机构
[1] Hitachi Ltd, Hitachi Res Lab, Ibaraki, Japan
[2] Hitachi Ltd, Hitachi Device Dev Ctr, Tokyo, Japan
关键词
high-voltage; monolithic isolator; network interface; SOI;
D O I
10.1109/16.998600
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have developed a multichannel monolithic isolator that can provide 2.3 kV ac isolation and 100-MHz signal transmission. The isolator uses high-voltage, on-chip isolator technology including trench isolation with buried oxide on the silicon-on-oxide (SOI) substrate and 0.4 mum CMOS driver and receiver circuits. This technology lets us produce a four-channel monolithic isolator with an area of 1.5 mm(2) and a consumption current of 0.5 mA per channel at a frequency of 50 MHz. These operating values suggest that the monolithic isolator can miniaturize the communication interface and reduce power consumption since discrete devices, such as transformers and opto-couplers, are unnecessary. We have also developed a one-chip modem interface LSI that includes the multichannel isolator and an analog front-end circuit.
引用
收藏
页码:895 / 901
页数:7
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