Characterization of Cu(In,Ga)Se2 films by Raman scattering

被引：92
|
作者：
Roy, S
Guha, P
Kundu, SN
Hanzawa, H
Chaudhuri, S [1 ]
Pal, AK
机构：
[1] Indian Assoc Cultivat Sci, Dept Mat Sci, Kolkata 700032, W Bengal, India
[2] Osaka Univ, Dept Phys Sci, Div Mat Phys, Grad Sch Engn Sci, Toyonaka, Osaka 560, Japan
来源：
MATERIALS CHEMISTRY AND PHYSICS | 2002年 / 73卷 / 01期
关键词：
Raman scattering; semiconductor; chalcopyrites;
D O I：
10.1016/S0254-0584(01)00345-5
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Raman spectra of CuIn1-x GaxSe2 (0 < x less than or equal to 0.29) thin films were measured at room temperature and low (similar to 10 K) temperature to examine the Raman active modes in the films for different x values. The variation of the most intense mode (A(1) mode) with frequency was studied and was compared with the theoretical plot. Although anion is not being substituted in the films (for different x), its mass was found to influence the Raman shift in the system. Optical band gaps of Cu(In,Ga)Se-2 films were found to vary with x showing a bowing effect. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：24 / 30
页数：7
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