THERMOELECTRIC TRANSPORT IN Sb2Te3/Bi2Te3 QUANTUM DOT NANOCOMPOSITES

被引:0
|
作者
Zhou, J. [1 ]
Yang, R. G. [1 ]
机构
[1] Univ Colorado, Dept Mech Engn, Boulder, CO 80309 USA
关键词
THERMAL-CONDUCTIVITY; MERIT ENHANCEMENT; FIGURE; PERFORMANCE; PBTE; BI2TE3-SB2TE3;
D O I
暂无
中图分类号
TH [机械、仪表工业];
学科分类号
0802 ;
摘要
We investigate the thermoelectric transport properties of Sb2Te3/Bi2Te3 quantum dot nanocomposites with spherical Sb2Te3 quantum dots arrays embedded in Bi2Te3 matrix through a two-channel transport model. In this model, the transport of quantum-confined electrons through the hopping mechanism is studied by tight-binding model together with Kubo formula and Green's function method. The formation of minibands due to the quantum confinement and the phonon-bottleneck effect on carrier-phonon scattering are considered. The transport of bulk-like electrons is studied by Boltzmann-transport-equation-based model. We consider the intrinsic carrier scatterings as well as the carrier-interface scattering of these bulk-like electrons. Thermoelectric transport properties are studied with different quantum dot sizes, inter-dot distances, doping concentrations, and temperatures. We find that electrical conductivity and Seebeck coefficient can be enhanced simultaneously in Sb2Te3/Bi2Te3 quantum dot nanocomposites because of the formation of minibands and the phonon-bottleneck effect on carrier-phonon scattering. Our results could shed some light on the design of high-efficiency thermoelectric materials.
引用
收藏
页码:387 / 394
页数:8
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