Rate predictions for single-event effects - Critique II

被引:25
|
作者
Petersen, EL
Pouget, V
Massengill, LW
Buchner, SP
McMorrow, D
机构
[1] CNRS, UMR 3405, IXL, Talence, France
[2] Vanderbilt Univ, Nashville, TN 37203 USA
[3] NASA, Goddard Space Flight Ctr, QSS Grp Inc, Greenbelt, MD 20771 USA
[4] USN, Res Lab, Washington, DC 20375 USA
关键词
figure of merit (FOM); heavy ion; picosecond pulsed laser; proton; SEU rates; single event simulation; single event upset (SEU);
D O I
10.1109/TNS.2005.860687
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The concept of charge efficacy is introduced as a measure of the effectiveness of incident charge for producing single-event upsets. Efficacy is a measure of the single-event upset (SEU) sensitivity within a cell. It is illustrated how the efficacy curve can be determined from standard heavy-ion or pulsed laser SEU cross-section data, and discussed how it can be calculated from combined charge collection and circuit analysis. Upset rates can be determined using the figure of merit approach, and values determined from the laser cross-sections or from the mixed-mode simulations. The standard integral rectangular parallel-piped (IRPP) method for upset rate calculation is re-examined assuming that the probability of upset depends on the location of the hit on the surface. It is concluded that it is unnecessary to reformulate the IRPP approach.
引用
收藏
页码:2158 / 2167
页数:10
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