Study of behaviors of aluminum overlayers deposited on uranium via AES, EELS, and XPS

被引：25

作者：

Liu, Kezhao ^{[1
,2
,3
]}

Luo, Lizhu ^{[3
]}

Zhou, Wei ^{[4
]}

Yang, Jiangrong ^{[3
]}

Xiao, Hong ^{[4
]}

Hong, Zhanglian ^{[1
,2
]}

Yang, Hui ^{[1
,2
]}

机构：

[1] Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China

[2] Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China

[3] Natl Key Lab Surface Phys & Chem, Mianyang 621907, Sichuan, Peoples R China

[4] China Acad Engn Phys, Mianyang 621900, Sichuan, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2013年 / 270卷

关键词：

Uranium; Aluminum overlayer; Auger electron spectroscopy; Electron energy loss spectroscopy; X-ray photoelectron spectroscopy; Growth mode; SURFACE SPECTROSCOPY; THIN-LAYERS;

D O I：

10.1016/j.apsusc.2012.12.164

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Aluminum overlayers on uranium were prepared by sputtering at room temperature in an ultra-high vacuum chamber. The growth mode of aluminum overlayers and behaviors of the Al/U interface reaction were studied in situ by auger electron spectroscopy, electron energy loss spectroscopy, and X-ray photoelectron spectroscopy. The results suggested that the interdiffusion took place at the Al/U interface during the initial stage of deposition. The U4f spectra of the Al/U interface showed strong correlation satellites at binding energies of 380.4 and 392.7 eV and plasma loss features at 404.2 eV, respectively. The interactions between aluminum and uranium yielded the intermetallic compound of UAlx, inducing the shift to a low binding energy for Al2p peaks. The results indicated that aluminum overlayers were formed on the uranium by sputtering in an island growth mode. (C) 2013 Published by Elsevier B.V.

引用

页码：184 / 189

页数：6

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