Unified model of fractal conductance fluctuations for diffusive and ballistic semiconductor devices

被引：24

作者：

Marlow, C. A.

Taylor, R. P. ^{[1
]}

Martin, T. P.

Scannell, B. C.

Linke, H.

Fairbanks, M. S.

Hall, G. D. R.

Shorubalko, I.

Samuelson, L.

Fromhold, T. M.

Brown, C. V.

Hackens, B.

Faniel, S.

Gustin, C.

Bayot, V.

Wallart, X.

Bollaert, S.

Cappy, A.

机构：

[1] Univ Oregon, Dept Phys, Inst Mat Sci, Eugene, OR 97403 USA

[2] Univ Latvia, Inst Solid State Phys, LV-1063 Riga, Latvia

[3] Lund Univ, Nanometer Consortium, S-22100 Lund, Sweden

[4] Univ Nottingham, Sch Phys & Astron, Nottingham NG7 2RD, England

[5] Nottingham Trent Univ, Sch Biomed & Nat Sci, Nottingham NG11 8NS, England

[6] Catholic Univ Louvain, PCPM, CERMIN, B-1348 Louvain, Belgium

[7] Catholic Univ Louvain, DICE Labs, B-1348 Louvain, Belgium

[8] IEMN, Villeneuve Dascq, France

来源：

PHYSICAL REVIEW B | 2006年 / 73卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.73.195318

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present an experimental comparison of magnetoconductance fluctuations measured in the ballistic, quasiballistic, and diffusive scattering regimes of semiconductor devices. In contradiction to expectations, we show that the spectral content of the magnetoconductance fluctuations exhibits an identical fractal behavior for these scattering regimes and that this behavior is remarkably insensitive to device boundary properties. We propose a unified model of fractal conductance fluctuations in the ballistic, quasiballistic, and diffusive transport regimes, in which the generic fractal behavior is generated by a subtle interplay between boundary and material-induced chaotic scattering events.

引用

页数：7

共 50 条

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