Epitaxial growth of perovskite oxide thin films

被引:5
|
作者
Lian, GJ [1 ]
Li, MY
Kang, JF
Guo, JD
Sun, YF
Xiong, GC
机构
[1] Peking Univ, Dept Phys, Beijing 100871, Peoples R China
[2] Shantou Univ, Dept Phys, Shantou 515063, Peoples R China
关键词
D O I
10.7498/aps.48.1917
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Based on the achievement of epitaxial growth in several Perovskite oxide films, we discuss the importance of substrate temperature (T-s) and substrate material in the epitaxial growth of perovskite oxide thin films. Influences of T-s on growth orientation and epitaxial threshold temperature were observed. The results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. The threshold temperature for epitaxial growth depends on the substrate materials. This demonstrates the influence of substrate material on the initial nucleation and epitaxial growth.
引用
收藏
页码:1917 / 1922
页数:6
相关论文
共 11 条
  • [1] A nonvolatile ferroelectric memory device with a floating gate
    Chen, FY
    Fang, YK
    Sun, MJ
    Chen, JR
    [J]. APPLIED PHYSICS LETTERS, 1996, 69 (21) : 3275 - 3276
  • [2] Observation of the Stranski-Krastanov growth transition in GdBa2Cu3O7-delta films
    Dediu, V
    Kursumovic, A
    Greco, O
    Biscarini, F
    Matacotta, FC
    [J]. PHYSICAL REVIEW B, 1996, 54 (03): : 1564 - 1567
  • [3] THOUSANDFOLD CHANGE IN RESISTIVITY IN MAGNETORESISTIVE LA-CA-MN-O FILMS
    JIN, S
    TIEFEL, TH
    MCCORMACK, M
    FASTNACHT, RA
    RAMESH, R
    CHEN, LH
    [J]. SCIENCE, 1994, 264 (5157) : 413 - 415
  • [4] Electromechanical properties of SrBi2Ta2O9 thin films
    Kholkin, AL
    Brooks, KG
    Setter, N
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (14) : 2044 - 2046
  • [5] EPITAXIAL-GROWTH AND CRITICAL CURRENTS IN (013)/(103)-ORIENTED AND (110)-ORIENTED YBA2CU3OX FILMS
    RAVEN, MS
    INAMETI, EE
    IWAMA, S
    WAN, YM
    MURRAY, BG
    [J]. PHYSICAL REVIEW B, 1995, 52 (09): : 6845 - 6853
  • [6] Activation field of ferroelectric (Pb,La)(Zr,Ti)O-3 thin film capacitors
    Song, TK
    Aggarwal, S
    Prakash, AS
    Yang, B
    Ramesh, R
    [J]. APPLIED PHYSICS LETTERS, 1997, 71 (15) : 2211 - 2213
  • [7] FORMATION OF ARTIFICIAL BATIO3/SRTIO3 SUPERLATTICES USING PULSED-LASER DEPOSITION AND THEIR DIELECTRIC-PROPERTIES
    TABATA, H
    TANAKA, H
    KAWAI, T
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (15) : 1970 - 1972
  • [8] OXYGEN-PRESSURE DEPENDENCE OF THE GRAIN-SIZE AND SURFACE-MORPHOLOGY IN YBA2CU3O7-X A-AXIS FILMS
    TRAJANOVIC, Z
    TAKEUCHI, I
    WARBURTON, PA
    LOBB, CJ
    VENKATESAN, T
    [J]. APPLIED PHYSICS LETTERS, 1995, 66 (12) : 1536 - 1538
  • [9] METAL-SEMICONDUCTOR-TRANSITION AND SPIN-GLASS PROPERTIES OF LA(2-X)/3BA(1+X)/3MN1-XCUXO3
    VONHELMOLT, R
    HAUPT, L
    BARNER, K
    SONDERMANN, U
    [J]. SOLID STATE COMMUNICATIONS, 1992, 82 (09) : 693 - 696
  • [10] GIANT NEGATIVE MAGNETORESISTANCE IN PEROVSKITELIKE LA2/3BA1/3MNOX FERROMAGNETIC-FILMS
    VONHELMOLT, R
    WECKER, J
    HOLZAPFEL, B
    SCHULTZ, L
    SAMWER, K
    [J]. PHYSICAL REVIEW LETTERS, 1993, 71 (14) : 2331 - 2333