Electrical properties of HgCdTe films grown by MOCVD and doped with as

被引：6

作者：

Izhnin, I. I. ^{[1
]}

Savytskyy, H. V. ^{[1
]}

Fitsych, O. I. ^{[2
]}

Piotrowski, J. ^{[3
]}

Mynbaev, K. D. ^{[4
]}

机构：

[1] R&D Inst Mat SRC Carat, UA-79031 Lvov, Ukraine

[2] Franko Lviv Natl Univ, UA-79000 Lvov, Ukraine

[3] VIGO Syst SA, PL-05850 Ozarow Mazowiecki, Poland

[4] RAS, AF Ioffe Phys Tech Inst, St Petersburg 194021, Russia

来源：

OPTO-ELECTRONICS REVIEW | 2013年 / 21卷 / 02期

关键词：

MOCVD; HgCdTe; As doping; electrical properties; POINT-DEFECTS; RELAXATION; MOVPE;

D O I：

10.2478/s11772-013-0086-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electrical properties of HgCdTe films grown by metal-organic chemical vapour deposition (MOCVD) on GaAs substrates and doped with the As acceptor during the growth were studied. Discrete mobility spectrum analysis was used to extract the parameters of the as-grown films and films after ion milling and during prolonged relaxation of milling-induced defects. The measurements revealed significant compensation of the as-grown MOCVD HgCdTe with As on Te sites being the main defect, residual donor concentration of the order of (2-5)x10(15) cm(-3), and the presence of some unidentified defects.

引用

页码：220 / 226

页数：7

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