Charging effect of Al2O3 thin films containing Al nanocrystals

被引：14

作者：

Liu, Y. ^{[1
,2
]}

Chen, T. P. ^{[1
]}

Zhu, W. ^{[1
]}

Yang, M. ^{[1
]}

Cen, Z. H. ^{[1
]}

Wong, J. I. ^{[1
]}

Li, Y. B. ^{[3
]}

Zhang, S. ^{[4
]}

Chen, X. B. ^{[2
]}

Fung, S. ^{[5
]}

机构：

[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[2] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devi, Chengdu 610054, Sichuan, Peoples R China

[3] Harbin Inst Technol, Sch Astronaut, Ctr Composite Mat, Harbin 150080, Peoples R China

[4] Nanyang Technol Univ, Sch Mech & Aerosp Engn, Singapore 639798, Singapore

[5] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 93卷 / 14期

基金：

中国国家自然科学基金; 新加坡国家研究基金会;

关键词：

D O I：

10.1063/1.2994695

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work, Al(2)O(3) thin film containing Al nanocrystals (nc-Al) is deposited on Si substrate by radio frequency sputtering to form a metal-insulator-semiconductor structure. Both electron and hole trapping in nc-Al are observed. The charge storage ability of the nc-Al/Al(2)O(3) thin films provides the possibility of memory applications. Charging in the nc-Al also leads to a change in the dc resistance of the thin films, namely, the electron trapping in the nc-Al leads to an increase in the resistance, whereas the resistance is reduced if there is hole trapping in the nc-Al. (C) 2008 American Institute of Physics.

引用

页数：3

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