Magnetic and electronic properties of epitaxial γ-cerium thin films

被引：8
|
作者：
Rothman, J
Meyer, C
Givord, D
Vogel, J
Finazzi, M
Fontaine, A
Kappler, JP
Brookes, NB
机构：
[1] CNRS, Lab Louis Neel, F-38042 Grenoble, France
[2] European Synchrotron Radiat Facil, F-38043 Grenoble, France
[3] IPCMS, F-67037 Strasbourg, France
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1999年 / 198-99卷
关键词：
gamma-cerium; magnetic moments; valence; Kondo effect;
D O I：
10.1016/S0304-8853(98)01085-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Epitaxial Ce (1 1 1) thin films have been grown under UHV conditions on a W(1 1 0) buffer. X-ray diffraction studies at low temperature and the absence of transition deduced from the different physical measurements show that in all films (thickness from 60 to 300 Angstrom). the Ce gamma-phase is stabilised by the epitaxy down to low temperatures. XAS and XMCD revealed that Ce in these films exhibit localised 4f(1) character and is paramagnetic down to the lowest temperature in the present study. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：276 / 278
页数：3
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