Effect of substrate temperature on hot-filament CVD grown diamond films at constant filament current

被引：7

作者：

Ali, M. ^{[1
]}

Qazi, I. A. ^{[2
]}

机构：

[1] COMSATS Inst Informat Technol, Dept Phys, Islamabad 44000, Pakistan

[2] Natl Univ Sci & Technol, Sch Civil & Environm Engn, Islamabad 44000, Pakistan

来源：

INTERNATIONAL JOURNAL OF SURFACE SCIENCE AND ENGINEERING | 2012年 / 6卷 / 03期

关键词：

thin films; crystal structure; crystal morphology; growth rate; surface science; CHEMICAL-VAPOR-DEPOSITION; THIN-FILMS; NANOCRYSTALLINE DIAMOND; RAMAN-SPECTRUM; NUCLEATION; DEFECTS; SURFACE; STRESS; HFCVD;

D O I：

10.1504/IJSURFSE.2012.049054

中图分类号：

TH [机械、仪表工业];

学科分类号：

0802 ;

摘要：

This is a systematic study of diamond films grown over silicon substrate by the hot-filament chemical vapour deposition technique at substrate temperatures of 750-50-1,000 degrees C. The resulting films are characterised using the scanning electron microscope, X-ray diffraction and Raman spectroscopy. Our observations are that with the increase in the substrate temperature the morphology of deposited film changed from cauliflower structure to pyramidal featured structure. At substrate temperature of 950 degrees C, planar growth of diamond film was observed, showing good purity crystals. This type of growth has potential for applications where atomically flat surface at localised regions is a prime concern.

引用

页码：214 / 230

页数：17

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