Optical fingerprints of Y2 ordering in III-V ternary semiconductor alloys

被引：3

作者：

Chen, Dongguo ^{[1
]}

Ravindra, N. M. ^{[1
]}

机构：

[1] New Jersey Inst Technol, Dept Phys, Newark, NJ 07102 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2013年 / 28卷 / 06期

关键词：

VAPOR-PHASE EPITAXY; LONG-RANGE ORDER; BAND-GAP ENERGY; ELECTROREFLECTANCE; GA0.5IN0.5P; GAAS; ALXGA1-XAS; DEPENDENCE; INP;

D O I：

10.1088/0268-1242/28/6/065012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we report the Y2 ordering induced changes in the crystal field splitting, spin-orbit splitting and band gap for AlxGa1-xAs, GaxIn1-xAs, GaxIn1-xP, GaAsxSb1-x and InPxSb1-x using first-principles calculations. These values and the valence band splittings E-12, E-13 for these materials are provided as a function of the ordering parameter eta. The trends of these properties among materials are explained. The optical fingerprints of Y2 ordering are then compared with those of other available structures and the experimental data.

引用

页数：5

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