SENSORS OF MAGNETIC FIELD BASED ON MAGNETORESISTIVE EFFECT

被引：0
|
作者：
Sadovskov, I. D. [1 ]
Zaharov, A. A. [1 ]
机构：
[1] Saratov State Tech Univ Name Gagarin Yu A, Saratov, Russia
来源：
2012 INTERNATIONAL CONFERENCE ON ACTUAL PROBLEMS OF ELECTRON DEVICES ENGINEERING (APEDE 2012) | 2012年
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D O I：
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
SENSORS OF MAGNETIC FIELD BASED ON MAGNETORESISTIVE EFFECT This article describes sensors of magnetic field based on magnetoresistive effect. Learning magnetoresistive effect is actually scientific research work now. Magnetoresistive sensors on ferromagnetic structures are divided into Anisotropic Magnetoresistor (AMR), Giant Magnetoresistor (GMR), Spin-Dependent Tunneling (SDT) Magnetoresistor. Using GMR and SDT sensors perspective to create highly sensitive and integrated measuring electronic devices.
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页码：402 / 408
页数：7
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