Analyses of light extraction efficiency in GaN-based LEDs grown on patterned sapphire substrates

被引：12

作者：

Xu, Chenglong ^{[1
]}

Yu, Tongjun ^{[1
]}

Yan, Jian ^{[1
]}

Yang, Zhiyuan ^{[1
]}

Li, Xingbin ^{[1
]}

Tao, Yuebin ^{[1
]}

Fu, Xingxing ^{[1
]}

Chen, Zhizhong ^{[1
]}

Zhang, Guoyi ^{[1
]}

机构：

[1] Peking Univ, State Key Lab Artificial Microstruct & Mesoscop P, Sch Phys, Beijing 100871, Peoples R China

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 3-4 | 2012年 / 9卷 / 3-4期

关键词：

GaN; LEDs; patterned sapphire substrate; light extraction efficiency; EMITTING-DIODES; INTENSITY;

D O I：

10.1002/pssc.201100412

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The GaN-based LEDs external quantum efficiency (EQE) is significantly improved by using the patterned sapphire substrate (PSS) technique. The enhancements in the light extraction efficiency (LEE) and the internal quantum efficiency (IQE) were evaluated based on a rate equation analysis of EQE versus the square root of the light-output power (EQE-P) curves. The estimated enhancement in the LEE was much larger than that in the IQE. The detailed mechanism of improving the LEE by PSS technique was investigated using Monte-Carlo ray tracing simulation. The LEE increased with the pattern height, and tended to be saturated when the height was over 1.5 mu m. These results indicate that the improved light output power of GaN-based LEDs on PSS is mainly due to the enhancement in LEE. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：757 / 760

页数：4

共 50 条

[1] Improved light extraction efficiency of GaN-based LEDs with patterned sapphire substrate and patterned ITO
Zhou, Shengjun
Cao, Bin
Liu, Sheng
Ding, Han
[J]. OPTICS AND LASER TECHNOLOGY, 2012, 44 (07): : 2302 - 2305
[2] Research for Patterned Sapphire Substrates of GaN-based LEDs
Li Cheng-Cheng
Xu Zhi-Mou
Sun Tang-You
Wang Zhi-Hao
Wang Shuang-Bao
Zhang Xue-Ming
Peng Jing
[J]. JOURNAL OF INORGANIC MATERIALS, 2013, 28 (08) : 869 - 874
[3] GaN-based LEDs on Nano-patterned Sapphire Substrates
Zhang, Jing
Sakai, Shiro
[J]. ADVANCED MATERIALS, PTS 1-3, 2012, 415-417 : 656 - +
[4] Parameters optimization of nanopatterned sapphire substrates for enhancing light extraction efficiency of GaN-based LEDs
Zhang, Pengcheng
Wen, Qiuling
Xu, Xipeng
[J]. OPTICS COMMUNICATIONS, 2020, 464
[5] Influence of the microstructure geometry of patterned sapphire substrates on the light extraction efficiency of GaN LEDs
Kuo, Chien-Ting
Hsu, Lung-Hsing
Huang, Bo-Hsin
Kuo, Hao-Chung
Lin, Chien-Chung
Cheng, Yuh-Jen
[J]. APPLIED OPTICS, 2016, 55 (26) : 7387 - 7391
[6] Improvement of vertical light extraction from GaN-based LEDs on moth-eye patterned sapphire substrates
Ohya, Masaki
Naniwae, Koichi
Kondo, Toshiyuki
Suzuki, Atsushi
Mori, Midori
Kitano, Tsukasa
Usui, Akane
Kamiyama, Satoshi
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 212 (05): : 935 - 940
[7] Improvement of the performance of GaN-based LEDs grown on sapphire substrates patterned by wet and ICP etching
Gao, Haiyong
Yan, Fawang
Zhang, Yang
Li, Jinmin
Zeng, Yiping
Wang, Guohong
[J]. SOLID-STATE ELECTRONICS, 2008, 52 (06) : 962 - 967
[8] Fabrication and characterization of GaN-based LEDs grown on chemical wet-etched patterned sapphire substrates
Lee, Y. J.
Kuo, H. C.
Lu, T. C.
Su, B. J.
Wang, S. C.
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2006, 153 (12) : G1106 - G1111
[9] Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates
Lee, Y. J.
Hwang, J. M.
Hsu, T. C.
Hsieh, M. H.
Jou, M. J.
Lee, B. J.
Lu, T. C.
Kuo, H. C.
Wang, S. C.
[J]. IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (9-12) : 1152 - 1154
[10] Fabrication and characterization of GaN-based LEDs grown on nanopatterned sapphire substrates
Gao, Haiyong
Yan, Fawang
Zhang, Yang
Li, Jinmin
Zeng, Yiping
Wang, Guohong
[J]. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2008, 205 (07): : 1719 - 1723

← 1 2 3 4 5 →