Ni-Mn-In Heusler alloy thin films grown by pulsed laser deposition

We report on the results of the magnetic and structure properties investigation of Heusler alloy films. Ni-Mn-In thin films were formed by pulsed laser deposition. Stoichiometry was varied and controlled by co-deposition technique. The different deposition conditions and influence of the annealing temperature on the film composition were investigated using Auger electron spectroscopy and Rutherford backscattering spectrometry. The optimal annealing temperature was found to be 620 K. The set of the films deposited on the oxidized Si (100) substrate at room temperature and annealed at 620 K was investigated using X-ray diffractometry at room temperature and Vibrating sample magnetometery at low temperatures. The crystal structure was found to be a mixture of austenitic and martensitic phases at room temperature. Decreasing of Curie temperature from 270 K to 250 K with the decreasing of In concentration from 20 at % to 15 at % was observed.