Microwave amplifier design using high mobility electron transistor

Microwave amplifier is a radio frequency device used for many applications in telecommunication technology such as C Band weather radar application. The microwave amplifier usually exists in transmitter section to amplify weak signal that will be delivered to antenna. This paper discusses design and fabrication of a microwave amplifier using High Mobility Electron Transistor (HMET) CGH40006P. The reason using such kind of transistor is due to its high gain and linearity. In order to achieve maximum power transfer at frequency of 5.6 GHz. The amplifier is constructed in cascade architecture using the same type of transistors. Open ended single stub matching impedance networks are applied in this design as well. Based on measurement result, power gain of 21 dB is obtained for +20 dBm input power with Voltage Standing Wave Ratio (VSWR) of 1.1 and 13 dB noise figure.