Dependence of Exchange Stiffness on Metallic Spacer Layer Material and Thickness in Dual-Interface CoFeB/MgO Magnetic Thin Films

被引：10
|
作者：
Buford, Benjamin [1 ]
Dhagat, Pallavi [1 ]
Jander, Albrecht [1 ]
机构：
[1] Oregon State Univ, Sch Elect Engn & Comp Sci, Corvallis, OR 97331 USA
来源：
IEEE MAGNETICS LETTERS | 2016年 / 7卷
关键词：
Spin electronics; Co-Fe-B; magnetic random-access memory; magnetic thin film; exchange stiffness; magneto-optic Kerr effect;
D O I：
10.1109/LMAG.2016.2614250
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The dependence of exchange stiffness and domain wall width on spacer layer material and thickness in double-layer Co20Fe60B20 films is investigated. The exchange stiffness and wall width are inferred from magneto- optic Kerr microscope images of domain structure in conjunction with ferromagnetic resonance spectroscopy and vibrating sample magnetometer measurements of anisotropy and saturation magnetization. Samples include MgO-CoFeB-spacer-CoFeB-MgO films stacks with 0.3 nm, 0.5 nm, or 0.7 nm thick spacer layers consisting of W or Ta. These measurements allow for prediction of the thermal stability factor and nucleation diameter of magnetic tunnel junctions fabricated from these films.
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