Infrared signals correlated with self-interstitial clusters in neutron-irradiated silicon

被引:5
|
作者
Londos, C. A. [1 ]
Antonaras, G. [1 ]
Chroneos, A. [2 ,3 ]
机构
[1] Univ Athens, Dept Phys, Solid State Sect, Zografos 15784, Greece
[2] Open Univ, Milton Keynes MK7 6AA, Bucks, England
[3] Univ London Imperial Coll Sci Technol & Med, Dept Mat, London SW7 2AZ, England
关键词
ION-IMPLANTED SILICON; CARBON; DEFECTS; ALLENE; GERMANIUM; SI; IMPURITY; IMPACT; STATE;
D O I
10.1007/s10854-013-1406-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Using infrared spectroscopy we have investigated the defect spectrum of neutron-irradiated Czochralski-silicon (Cz-Si). The study was focused on three weak signals, mainly on a band at 533 cm(-1), as well as on two other bands at 582 and 592 cm(-1). The band at 533 cm(-1) disappears from the spectra at 170 A degrees C exhibiting similar thermal stability with the Si-P-6 electron paramagnetic resonance spectrum, previously correlated with a di-interstitial defect. The suggested model for the latter defect, comprising two self-interstitials placed symmetrically a lattice site Si atom, is very similar with that of the allene molecule. This allowed the calculation of the vibrational frequency of the suggested di-interstitial structure giving a value close to the 533 cm(-1), in further support of the above assignment. The band at 582 cm(-1) is stable up to 550 A degrees C. The possible correlation of its origin to large self-interstitial clusters is examined. Also, the origin of the 592 cm(-1) band, which is stable up to 200 A degrees C is discussed, with indications tentatively pointing to a CV pair.
引用
收藏
页码:4328 / 4331
页数:4
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