Influence of growth conditions on the lateral grain size of AIN film grown by metal-organic chemical vapor deposition

被引：1
|
作者：
Wu Liang-Liang [1 ]
Zhao De-Gang [1 ]
Li Liang [1 ]
Le Ling-Cong [1 ]
Chen Ping [1 ]
Liu Zong-Shun [1 ]
Jiang De-Sheng [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
来源：
ACTA PHYSICA SINICA | 2013年 / 62卷 / 08期
基金：
中国国家自然科学基金;
关键词：
A1N; Williamson-Hall; lateral grain size;
D O I：
10.7498/aps.62.086102
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
In this paper, we investigate the effect of growth conditions on the quality of AN film grown by metal-organic chemical vapor deposition. We test and analyze the influence of different growth conditions, such as nitridation time, growth time of AN buffer layer and the flow rate of carrier gas, on the lateral grain size of AN film. It is found that the redution of nitridation time, the increase of growth time of AN buffer layer, and the reduction of the flow rate of carrier gas can enhance the lateral growth of AN film and coalescence of islands and increase the lateral grain size of AN film. So the quality of AN film is improved.
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页数：5
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