Error Control Coding and Signal Processing for Flash Memories

被引:0
|
作者
Shin, Beomkyu [1 ]
Seol, Changkyu [1 ]
Chung, Jung-Soo [1 ]
Kong, Jun Jin [1 ]
机构
[1] Samsung Elect, Memory Business, Hwaseong, South Korea
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
With the rapid advances in the area of memory product, it has become more and more important to maintain its reliability while increasing the density and speed performance. Particularly, flash memory products have inherent difficulties in lengthening the limited lifetime due to the degradation of memory cell reliability caused by repeated read and/or write operations. To increase the benefits of high density flash memory, more advanced techniques such as multi-leveling the cell and signal processing has been adopted to the flash memory products. In this paper, arising challenges that leading engineers in semiconductor memory industries have confronted will be shared to further develop cutting-edge flash memory products.
引用
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页码:409 / 412
页数:4
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