Comprehensive Insight into p-Type Bi2Te3-Based Thermoelectrics near Room Temperature

被引:40
|
作者
Shi, Qing [1 ]
Li, Juan [2 ]
Zhao, Xuanwei [1 ]
Chen, Yiyuan [1 ]
Zhang, Fujie [1 ]
Zhong, Yan [1 ]
Ang, Ran [1 ,3 ]
机构
[1] Sichuan Univ, Inst Nucl Sci & Technol, Minist Educ, Key Lab Radiat Phys & Technol, Chengdu 610064, Peoples R China
[2] Chinese Acad Sci, Shenzhen Inst Adv Elect Mat, Shenzhen Inst Adv Technol, Shenzhen 518055, Peoples R China
[3] Sichuan Univ, Inst New Energy & Low Carbon Technol, Chengdu 610065, Peoples R China
基金
中国国家自然科学基金;
关键词
thermoelectricity; topological insulators; p-type Bi2Te3-based alloys; microstructural defects; electrical transport; lattice thermal conductivity; THERMAL TRANSPORT-PROPERTIES; BISMUTH-ANTIMONY TELLURIDE; TOPOLOGICAL INSULATOR; SEEBECK COEFFICIENT; PHONON-SCATTERING; BAND CONVERGENCE; VALENCE-BAND; MECHANICAL-PROPERTIES; LATTICE-DEFECTS; SOLID-SOLUTIONS;
D O I
10.1021/acsami.2c13109
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Bi2Te3 is a well-recognized material for its unique properties in diverse thermoelectric applications near room temperature. The considerable efforts on Bi2Te3-based alloys have been extremely extensive in recent years, and thus the latest breakthroughs in highperformance p-type (Bi, Sb)2Te3 alloys are comprehensively reviewed to further implement applications. Effective strategies to further improve the thermoelectric performance are summarized from the perspective of enhancing the power factor and minimizing the lattice thermal conductivity. Furthermore, the surface states of topological insulators are investigated to provide a possibility of advancing (Bi, Sb)2Te3 thermoelectrics. Finally, future challenges and outlooks are overviewed. This review will provide potential guidance toward designing and developing high-efficient Bi2Te3-based and other thermoelectrics.
引用
收藏
页码:49425 / 49445
页数:21
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