Thermal stability studies on ion beam sputter deposited substoichiometric iron nitride thin films

被引：2
|
作者：
Ding, XZ
Zhang, FM
Sun, YL
Zhou, ZY
Wang, X
Liu, XH
Shen, DF
机构：
[1] Ion Beam Laboratory, Shanghai Institute of Metallurgy, Chinese Academy of Sciences
来源：
SURFACE & COATINGS TECHNOLOGY | 1997年 / 91卷 / 03期
关键词：
iron nitride films; reactive ion beam sputtering; thermal stability;
D O I：
10.1016/S0257-8972(97)00001-7
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Iron nitride films were deposited on Ge(100) wafers by a reactive ion beam sputter deposition of iron in an ammonia atmosphere. The composition and microstructure of these films were monitored by Rutherford backscattering spectroscopy analyses and X-ray diffraction experiments. The influence of ammonia partial pressure on the microstructure of the films was studied. It was found that the optimum ammonia pressure for the alpha ''-Fe16N2 phase formation was about 5 x 10(-4) Torr or a little higher. The thermal stability of these Fe-N films was also investigated. Upon annealing at a temperature below 180 degrees C in a flowing nitrogen atmosphere, the alpha '' phase would decompose and nitrogen atoms would be released from the films.
引用
收藏
页码：215 / 219
页数：5
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