The effect of deposition temperature and RF power on the electrical and physical properties of the MgTiO3 thin films

MgTiO3 thin films were grown on Si(100) substrate by radio frequency (RF) magnetron sputtering. The microstructure and the surface morphology of MgTiO3 thin film have been studied by X-ray diffraction (XRD) and atomic force microscopy (AFM). The XRD showed that the deposited films exhibited a polycrystalline microstructure. The grain size of the film increased with an increase in the RF power and substrate temperature. The electrical properties were measured using capacitance-voltage and current-voltage measurements on metal-insulator semiconductor (MIS) capacitor structures. At a Ar/O-2 ratio of 100/0, RF power of 400 W and substrate temperature of 400 degrees C, the MgTiO3 films with 6 mu m thickness possess a dielectric constant of 16.2 (f = 10 MHz), a leakage current density of 10(-9) A/mm(2). (c) 2005 Elsevier B.V. All rights reserved.