DMSO Transport across Water/Hexane Interface by Molecular Dynamics Simulation

被引:15
|
作者
Hu, Yao-Feng [1 ]
Lv, Wen-Jie [2 ]
Shang, Ya-Zhuo [1 ]
Liu, Hong-Lai [1 ]
Wang, Hua-Lin [2 ]
Suh, Soong-Hyuck [3 ]
机构
[1] E China Univ Sci & Technol, Dept Chem, State Key Lab Chem Engn, Shanghai 200237, Peoples R China
[2] E China Univ Sci & Technol, State Environm Protect Key Lab Environm Risk Asse, Shanghai 200237, Peoples R China
[3] Keimyung Univ, Dept Chem Engn, Taegu 704701, South Korea
基金
中国国家自然科学基金;
关键词
LIQUID-VAPOR INTERFACE; PARTICLE MESH EWALD; DIMETHYL-SULFOXIDE; ION-TRANSPORT; WATER; ADSORPTION; MICROHETEROGENEITY; DIFFUSION; MIXTURES; SURFACE;
D O I
10.1021/ie303006d
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
Configurational, energetic, and dynamical properties of dimethyl sulfoxide (DMSO) transport across the water/hexane interface are investigated by molecular dynamics simulations. It is shown that the interface accumulation caused by the interface activity of DMSO dominates the diffusion process. In this case the underlying transport process can be divided into two steps by different energy landscapes and kinetic motions of solute molecules. In addition, interface deformation caused by solutes also influences the process and its impact on solutes is different on each side. A transfer of DMSO from the hexane phase to the interface (step I) is facilitated by free energy gradient and the interface deformation does not hinder its motion toward the interface, whereas its escape from the interface to the water phase (step II) will be obstructed by high free energy gradient and the interface deformation also plays a negative role. Consequently, step II dictates the whole transport process. However, the solute concentration in the interface is much higher than that in the bulk, and it is deduced that a larger interface area can lead to higher capacity of DMSO with higher extractions. For such systems observed in our simulation studies, the distribution of dispersed phase can be a key factor for the efficient extraction process.
引用
收藏
页码:6550 / 6558
页数:9
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