Photometric and Electrical characterizations of large area OLEDs aged under thermal and electrical stresses

被引：0

作者：

Alchaddoud, Alaa ^{[1
]}

Canale, Laurent ^{[2
]}

Zissis, Georges ^{[1
]}

机构：

[1] Toulouse Univ, LAPLACE Lab, UMR 5213, UPS, 118 Route Narbonne, F-31062 Toulouse 9, France

[2] Toulouse Univ, LAPLACE Lab, UMR 5213, CNRS, 118 Route Narbonne, F-31062 Toulouse 9, France

来源：

2017 IEEE INDUSTRY APPLICATIONS SOCIETY ANNUAL MEETING | 2017年

关键词：

OLED; degradation; signature; aging; thermal stress; electrical stress; photometric; electrical characterization; SMALL-MOLECULE; LIGHT; DEGRADATION;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The aim of this paper is to identify the electrical signatures of degradations of large area organic light emitting diodes, subjected to various stress conditions. Three Philips GL55 OLEDs were stressed under three distinct temperature values; 23 degrees C, 40 degrees C and 60 degrees C at a stress current density of J=15 mA/cm(2) (rated current density: Jn=9.49 mA/cm(2)). Under thermal and electrical stresses, an increase of the operating voltage was observed with stress time but thermal stress alone did neither affect the operating voltage nor the luminance values up to 60 degrees C.

引用

页数：3

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