Effects of Surface Temperature on High-Rate Etching of Silicon by Narrow-Gap Microwave Hydrogen Plasma

被引：13

作者：

Yamada, Takahiro ^{[1
,3
]}

Ohmi, Hiromasa ^{[1
,2
,3
]}

Okamoto, Kohei ^{[1
]}

Kakiuchi, Hiroaki ^{[1
,3
]}

Yasutake, Kiyoshi ^{[1
,2
,3
]}

机构：

[1] Osaka Univ, Dept Precis Sci & Technol, Grad Sch Engn, Suita, Osaka 5650871, Japan

[2] Osaka Univ, Res Ctr Ultra Precis Sci & Technol, Grad Sch Engn, Suita, Osaka 5650871, Japan

[3] Japan Sci & Technol Agcy, CREST, Chiyoda Ku, Tokyo 1020075, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2012年 / 51卷 / 10期

关键词：

CHEMICAL-VAPOR-DEPOSITION; ATOMIC-HYDROGEN; SI; HYDRIDE;

D O I：

10.1143/JJAP.51.10NA09

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of surface temperature on high-rate etching of Si by narrow-gap microwave hydrogen plasma have been investigated. The etch rate strongly depended on the surface temperature. The optimum temperature for the etching at high rate was about 70 degrees C. With increasing the temperature higher than 70 degrees C, decrease in etch rate was observed, and activation energy for the reaction process was estimated to be about -1.8 kcal/mol. This value agreed well with the result of the previous studies using low-pressure plasma conditions. In addition, hydrogen concentration was also affected by the surface temperature. The reduction in hydrogen concentration near the surface was observed in the etched sample at higher temperature. From these results, reaction mechanism causing the decrease in etch rate with the temperature increase has been discussed in terms of both desorption and in-diffusion of hydrogen from the surface. (C) 2012 The Japan Society of Applied Physics

引用

页数：4

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