Structural and optical properties of AlxGa1-xN nanowires

被引：30
|
作者：
Pierret, A. [1 ,2 ,3 ]
Bougerol, C. [1 ,4 ]
den Hertog, M. [6 ]
Gayral, B. [1 ,2 ]
Kociak, M.
Renevier, H. [5 ]
Daudin, B. [1 ,2 ]
机构：
[1] Univ Grenoble 1, CNRS, Inst Neel, CEA CNRS Grp Nanophys & Semicond, F-38054 Grenoble, France
[2] CEA Grenoble, INAC, SP2M, F-38054 Grenoble, France
[3] CNRS, ONERA, Lab Etud Microstruct, F-92322 Chatillon, France
[4] CEA Grenoble, F-38054 Grenoble, France
[5] Univ Paris 11, CNRS, Phys Solides Lab, UMR8502, F-91405 Orsay, France
[6] CNRS, UPR2940, Inst Neel, UJF, F-38042 Grenoble 9, France
来源：
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2013年 / 7卷 / 10期
关键词：
nitride semiconductors; nanowires; composition fluctuation; carrier localization; nanocathodoluminescence; molecular beam epitaxy; MOLECULAR-BEAM EPITAXY; LONG-RANGE ORDER; ALGAN; ALLOYS; FILMS; GAN;
D O I：
10.1002/pssr.201308009
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The structural properties of Al-x Ga1-xN nanowires with high Al content grown by plasma-assisted molecular beam epitaxy have been studied by high-resolution electron microscopy and X-ray diffraction. Evidence for marked chemical composition fluctuations has been found that have been assigned to kinetical effects during growth. Concomitantly, microphotoluminescence and nanocathodoluminescence experiments on single nanowires have revealed the presence of sharp emission lines, as an evidence of carrier localization. This feature has been assigned to several spatial scales of composition fluctuations, in agreement with the kinetically-driven growth model proposed for Al-x Ga1-xN nanowires. ((c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
引用
收藏
页码：868 / 873
页数：6
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