Properties of ZnO/W-doped In2O3/ZnO multilayer thin films deposited at different growth temperatures

被引：6
|
作者：
Gupta, R. K. [1 ]
Ghosh, K. [1 ]
Patel, R. [2 ]
Kahol, P. K. [1 ]
机构：
[1] Missouri State Univ, Dept Phys Astron & Mat Sci, Springfield, MO 65897 USA
[2] Missouri State Univ, Roy Blunt Jordan Valley Innovat Ctr, Springfield, MO 65806 USA
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2008年 / 41卷 / 21期
关键词：
D O I：
10.1088/0022-3727/41/21/215309
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Multilayer thin films of zinc oxide and tungsten-doped indium oxide are deposited by the pulsed laser deposition technique using a KrF excimer laser. The effect of growth temperature on the properties of multilayer films is studied. It is observed that these films are highly transparent and the transparency of the films increases with growth temperature. X-ray diffraction study reveals that films grown at high growth temperature are crystalline, while films grown at low growth temperature are amorphous in nature. The electrical properties such as conductivity and electron mobility of the multilayer films increase with growth temperature.
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页数：5
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