High-temperature thermal resistors based on silicon carbide

被引：0
|
作者：
Avramenko, S
Kiselev, V
Pavlenko, A
机构：
[1] Institute of Semiconductor Physics, Natl. Academy of Sciences of Ukraine, 252650 Kyiv
[2] Institute of Nuclear Research, Natl. Academy of Sciences of Ukraine, 252650 Kyiv
来源：
REVIEW OF SCIENTIFIC INSTRUMENTS | 1996年 / 67卷 / 08期
关键词：
D O I：
10.1063/1.1147081
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The technique of high-temperature cheap thermal resistor fabrication, based on polycrystal and fast neutron irradiated silicon carbide single crystals, is presented. The operating temperature range is 20-600 degrees C for polycrystal devices and 200-800 degrees C for single crystal devices and coefficient B in the expression R=R(0) exp(BIT) is equal to 4500 and 10 000, respectively. (C) 1996 American Institute of Physics.
引用
收藏
页码：2966 / 2967
页数：2
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