Engineering the magnetic anisotropy axes in epitaxial half-Heusler NiMnSb by Pt and Ta capping

被引:4
|
作者
Gerhard, F. [1 ,2 ]
Baussenwein, M. [1 ,2 ]
Scheffler, L. [1 ,2 ]
Kleinlein, J. [1 ,2 ]
Gould, C. [1 ,2 ]
Molenkamp, L. W. [1 ,2 ]
机构
[1] Univ Wurzburg, Phys Inst EP3, D-97074 Wurzburg, Germany
[2] Inst Topol Insulators, D-97074 Wurzburg, Germany
关键词
D O I
10.1063/1.5001385
中图分类号
O59 [应用物理学];
学科分类号
摘要
The magnetic anisotropy in NiMnSb has been found to be highly sensitive to layer parameters, such as Mn concentration or thickness. Here, we report on the magnetic anisotropy of thin epitaxial single crystal quality NiMnSb films (3-40 nm) in combination with different capping layer materials, Ru, Pt, and Ta. We observe that the easy axis of the magnetic anisotropy is forced into the [1 (1) over bar0] crystal direction for Pt capped and into the [110] crystal direction for Ta capped NiMnSb, irrespective of the original anisotropy of the NiMnSb film. This effect is independent of the thickness of the capping layer and even present in multilayers with a Cu interlayer (few nanometers) between the NiMnSb and Pt cap, indicating that it is not related to interface chemistry and possibly pointing to it originating from the strong spin-orbit coupling in the capping layers. Published by AIP Publishing.
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页数:4
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