Solvo-thermal synthesis of AlN nano-needles: Their photoluminescence and field emission properties

被引：9
|
作者：
Shah, Sajjad Hussain [1 ]
Nabi, Ghulam [2 ,3 ]
Khan, Waheed S. [2 ,4 ]
Majid, Abdul [3 ]
Cao, Chuanbao [2 ]
Ali, Safdar [3 ]
Hussain, Mudassar [3 ]
Nabi, Azeem [3 ]
Ishaq, Saadi [3 ]
Butt, Faheem K. [2 ]
机构：
[1] Beijing Inst Technol, Sch Sci, Dept Phys, Beijing 100081, Peoples R China
[2] Beijing Inst Technol, Sch Mat Sci & Engn, Res Ctr Mat Sci, Beijing 100081, Peoples R China
[3] Univ Gujrat, Dept Phys, Gujrat 50700, Punjab, Pakistan
[4] Natl Inst Biotechnol & Genet Engn, Faisalabad, Pakistan
来源：
MATERIALS LETTERS | 2013年 / 107卷
关键词：
Nano-needle; Semiconductors; Chemical vapor deposition; Defects; Field emission properties; GROWTH;
D O I：
10.1016/j.matlet.2013.06.010
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
High density aluminum nitride nano-needles with sharp tips have been synthesized on Si substrate by pre-treating the precursors with aqueous NH3 via facile chemical vapor deposition method without any catalyst. The as synthesized nano-needles have been characterized by XRD, FESEM, EDX, HRTEM and SAED. The observed diameter of the nano-needles is 40-100 nm having sharp tips. The AlN-nano-needles exhibited amazing turn-on field of 5.65 V mu m(-1) (0.01 mA cm(-2)) at room temperature which is sufficient for electron emission devices, field emission displays and vacuum nano-electronic devices. The room-temperature PL emission peak at 486 nm (2.55 eV) indicates that AlN nano-needles also have potential application in light-emitting nano-device. (C) 2013 Elsevier B.V. All rights reserved.
引用
收藏
页码：255 / 258
页数：4
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