Peculiarities of Recharging Process Yb2+ → Yb3+ in Yb:Y3Al5O12 Epitaxial Films under High Temperature Oxidation

被引：0
|
作者：
Martynyuk, N. [1 ]
Buryy, O. [1 ]
Ubizskii, S. [1 ]
Syvorotka, I. [2 ]
Becker, K. D. [3 ]
机构：
[1] Lviv Polytech Natl Univ, Lvov, Ukraine
[2] SRC Carat, Inst Mat, Lvov, Ukraine
[3] Tech Univ Carolo Wilhelmina Braunschweig, D-38106 Braunschweig, Germany
来源：
2014 IEEE INTERNATIONAL CONFERENCE ON OXIDE MATERIALS FOR ELECTRONIC ENGINEERING (OMEE) | 2014年
关键词：
ytterbium; yttrium-aluminum garnet (YAG); recharging of ions; oxidation kinetic; OPTICAL IN-SITU; LUMINESCENCE; Y3AL5O12; KINETICS;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this communication we analyze the reasons for distinctions of Yb2+ -> Yb3+ recharging processes taking place in Yb:Y3Al5O12 epitaxial films and bulk crystals under high temperature annealing. Influence of sample surface structure on the rate of oxidation process was found to be significant.
引用
收藏
页码：157 / 158
页数：2
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