SA-MOVPE of InGaAs nanowires and their compositions studied by micro-PL measurement

被引：21

作者：

Sato, Takuya ^{[1
]}

Kobayashi, Yasunori

Motohisa, Junichi

Hara, Shinjiro

Fukui, Takashi

机构：

[1] Hokkaido Univ, Grad Sch IST, Sapporo, Hokkaido 0608628, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 23期

关键词：

Nanostructures; Metalorganic vapor-phase epitaxy; Selective epitaxy; Semiconducting III-V materials;

D O I：

10.1016/j.jcrysgro.2008.07.123

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We studied the growth of InGaAs nanowires on InP(1 1 1)B substrates by selective-area metalorganic vapor-phase epitaxy (SA-MOVPE). We proposed a growth model of InGaAs nanowires based on the observation Of growth under various condition. We investigated the composition of InGaAs nanowires using micro-photoluminescence and confirmed the relation between composition of InGaAs nanowires and the growth rate. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：5111 / 5113

页数：3

共 5 条

[1] InP Nanowires Grown by SA-MOVPE
Gao, Q.
Tan, H. H.
Fu, L.
Parkinson, P.
Breuer, S.
Wong-Leung, J.
Jagadish, C.
2012 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAD 2012), 2012, : 45 - 46
[2] Micro-Raman and MICRO-PL investigation of ZNO: Cu nanowires for optoelectronic applications
Ganetsos, Th.
Kováč, J.
Kováč, J.
Bousiakou, Leda G.
Qindeel, R.
Farooq, W.A.
Aldossary, Omar M.
Optoelectronics and Advanced Materials, Rapid Communications, 2016, 10 (9-10): : 716 - 719
[3] FABRICATION OF III-V SEMICONDCTOR NANOWIRES BY SA-MOVPE AND THEIR APPLICATIONS TO PHOTONIC AND PHOTOVOLTAIC DEVICES
Fukui, T.
Tomioka, K.
Hara, S.
Hiruma, K.
Motohisa, J.
2010 22ND INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM), 2010,
[4] Micro-Raman and micro-PL investigation of ZnO: Cu nanowires for optoelectronic applications
Ganetsos, Th.
Kovac, J.
Kovac, J., Jr.
Bousiakou, Leda G.
Qindeel, R.
Farooq, W. A.
Aldossary, Omar M.
OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2016, 10 (9-10): : 716 - 719
[5] Fabrication of III-V semiconductor core-shell nanowires by SA-MOVPE and their device applications
Fukui, T.
Tomioka, K.
Hara, S.
Hiruma, K.
Motohisa, J.
PROCEEDINGS OF 2010 CONFERENCE ON OPTOELECTRONIC AND MICROELECTRONIC MATERIALS AND DEVICES (COMMAND 2010), 2010, : 209 - 210

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