Full-Band Tunneling Currents in Nanometer-Scale MOS Structures

被引：0

作者：

Sacconi, F. ^{[1
]}

Di Carlo, A. ^{[1
]}

Lugli, P. ^{[1
]}

Staedele, M. ^{[2
]}

机构：

[1] Univ Roma Tor Vergata, INFM Dept Elect Eng, Rome, Italy

[2] Corp Res, Infineon Technol AG, Munich, Germany

来源：

JOURNAL OF COMPUTATIONAL ELECTRONICS | 2003年 / 2卷 / 2-4期

关键词：

tunneling; full-band; MOS;

D O I：

10.1023/B:JCEL.0000011467.73718.05

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Using quantum mechanical methods that include the full band structure of Si and SiO2 and a selfconsistent potential, we study tunneling through ultrathin oxides. Limitations of the effective-mass approximation (EMA) are investigated. In particular, we obtain good agreement between calculated and measured tunneling current densities for a n-poly-Si/SiO2/p-Si MOS capacitor.

引用

页码：439 / 442

页数：4

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