Middle of the line dielectrics reliability and percolation modelling through 65nm to 28nm nodes

被引：0
|
作者：
Federspiel, X. [1 ]
Jasse, J. [1 ]
Ney, D. [1 ]
Roy, D. [1 ]
Rafik, M. [1 ]
机构：
[1] STMicroelectronics, Technol R&D, 850 Rue Jean Monnet, F-38926 Crones, France
来源：
2019 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP (IIRW) | 2019年
关键词：
CIVIOS; reliability; breakdown; spacer; contact;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report here reliability analysis of the CMOS technology middle of the line dielectrics from 65nm, 4nm and 28nm nodes. Time to breakdown characteristics of spacers including voltage acceleration factor, Weibull slope and activation energy is extracted and compared numerical percolation model.
引用
收藏
页码：60 / 63
页数：4
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