Diamond film synthesis at low temperature

被引:20
|
作者
Piazza, F
González, JA
Velázquez, R
De Jesús, J
Rosario, SA
Morell, G
机构
[1] Univ Puerto Rico, Dept Phys Sci, San Juan, PR 00931 USA
[2] Univ Puerto Rico, Dept Phys, San Juan, PR 00931 USA
[3] Univ Puerto Rico, Dept Phys & Elect, Humacao, PR 00791 USA
基金
美国国家航空航天局;
关键词
diamond film; hot filament CVD; sulfur-assisted CVD; low temperature;
D O I
10.1016/j.diamond.2005.07.028
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Sulfar-assisted hot-filament chemical vapor deposition was successfully employed to synthesize diamond films at relatively low substrate temperatures, sub 500 degrees C, on Mo and glass substrates. This result is ascribed to sulfur-containing species that create an additional carbon transport channel to the substrate, which explicitly requires a large temperature gradient to effectively operate. The grain size and roughness were found to decrease when the Mo substrate temperature was decreased, while the quality factor only showed a slight decrease. Moreover, the diamond quality, grain size, and roughness were found to increase on glass substrates in comparison to those on Mo substrates. (c) 2005 Published by Elsevier B.V.
引用
收藏
页码:109 / 116
页数:8
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