共 50 条
- [1] Positron annihilation in diamond, silicon and silicon carbide [J]. Applied Physics A: Materials Science and Processing, 1995, 61 (01): : 59 - 63
- [2] Calculation of positron affinity in silicon carbide. [J]. ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1996, 211 : 74 - NUCL
- [3] POSITRON-ANNIHILATION IN DIAMOND, SILICON AND SILICON-CARBIDE [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1995, 61 (01): : 59 - 63
- [6] Characterization of point defects in cubic silicon carbide using positron annihilation [J]. Denshi Gijutsu Sogo Kenkyusho Iho, 10 (23-29):
- [7] POSITRON DIAGNOSTICS OF DEFECTS IN NEUTRON-IRRADIATED SILICON-CARBIDE [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1989, 23 (07): : 790 - 793
- [8] Positron annihilation spectroscopic studies of 6H silicon carbide [J]. POSITRON ANNIHILATION - ICPA-12, 2001, 363-3 : 120 - 122
- [10] Silicon carbide as a new MEMS technology [J]. SENSORS AND ACTUATORS A-PHYSICAL, 2000, 82 (1-3) : 210 - 218