Anisotropic Thermoelectric Properties of MnSiγ Film Prepared on R-Sapphire

We attempted to obtain an epitaxial MnSi gamma (gamma similar to 1.7) film on R-sapphire, i.e., Sapphire(1 (1) over bar 02), substrate by pulsed laser deposition. We prepared MnSi gamma films by changing the substrate temperature gradient. It was found that the MnSi gamma film, whose temperature gradient in a substrate is parallel to Sapphire[11 (2) over bar0], could be grown epitaxially on the substrate. The epitaxial relationship was MnSi gamma (1000)[0010] parallel to Sapphire(1 (1) over bar 02)[11 (2) over bar0]. The thermoelectric properties of the epitaxial MnSi gamma film were different in the a- and c-axes, reflecting the anisotropic MnSi gamma crystal structure. The anisotropic thermoelectric properties are discussed in terms of the electronic structure. (c) 2012 The Japan Society of Applied Physics