An Optoelectronic Transimpedance Amplifier in 180-nm CMOS for Short-range LiDAR Sensors

This paper presents an optoelectronic transimpedance amplifier (OTIA) implemented in a 180-nm CMOS technology, in which a P+/N-well avalanche photodiode (APD) is realized on-chip to reduce signal distortions occurring from bond-wire and I/O pad at the input node, a voltage-mode feedforward input configuration is exploited to boost the transimpedance gain, and a cross-coupled inverter-based post-amplifier (CI-PA) is added to reduce the mismatches from the previous stage. The proposed OTIA demonstrate 95.1-dBO transimpedance gain, 608-MHz bandwidth, 4.54pA/vHz noise current spectral density, 26.4- dB dynamic range that corresponds to the input currents of 2.38 mu App similar to 50 mu App, and 39.3-mW power dissipation from a single 1.8-V supply. The chip core occupies the area of 0.068 mm2.