Investigation of responsivity decreasing with rising bias voltage in a GaN Schottky barrier photodetector

被引：3

作者：

Zhang, Shuang ^{[1
]}

Zhao, D. G. ^{[1
]}

Jiang, D. S. ^{[1
]}

Liu, W. B. ^{[1
]}

Duan, L. H. ^{[1
]}

Wang, Y. T. ^{[1
]}

Zhu, J. J. ^{[1
]}

Liu, Z. S. ^{[1
]}

Zhang, S. M. ^{[1
]}

Yang, Hui ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2008年 / 23卷 / 10期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1088/0268-1242/23/10/105015

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The unexpected decrease in measured responsivity observed in a specific GaN Schottky barrier photodetector (PD) at high reverse bias voltage was investigated and explained. Device equivalent transforms and small signal analysis were performed to analyse the test circuit. On this basis, a model was built which explained the responsivity decrease quantitatively. After being revised by this model, responsivity curves varying with bias voltage turned out to be reasonable. It is proved that the decrease is related to the dynamic parallel resistance of the photodiode. The results indicate that with a GaN Schottky PD, the choice of load resistance is restricted according to the dynamic parallel resistance of the device to avoid responsivity decay at high bias voltage.

引用

页数：6

共 50 条

[1] Influence of the bias voltage on the photoluminescence intensity and spectral responsivity of the GaN Schottky barrier photodetector
Wang, Baibin
Liu, Zongshun
Zhao, Degang
Liang, Feng
Yang, Jing
Chen, Ping
OPTICAL MATERIALS EXPRESS, 2021, 11 (06) : 1614 - 1621
[2] Modeling the spectral responsivity of ultraviolet GaN Schottky barrier photodetectors under reverse bias
Atalla, Mahmoud R. M.
Jiang, Zhenyu
Liu, Jie
Wang, Li
Ashok, S.
Xu, Jian
JOURNAL OF APPLIED PHYSICS, 2015, 117 (13)
[3] AlGaN/GaN Schottky Barrier Photodetector With Multi-MgxNy/GaN Buffer
Chang, S. J.
Lee, K. H.
Chang, P. C.
Wang, Y. C.
Kuo, C. H.
Wu, S. L.
IEEE SENSORS JOURNAL, 2009, 9 (1-2) : 87 - 92
[4] Fabrication and Investigation of MOS Modified Schottky Barrier Photodetector
Mohammed, Wagah F.
Al-Tikriti, Munther N.
Khatib, Nada N.
2012 SIXTH INTERNATIONAL CONFERENCE ON SENSING TECHNOLOGY (ICST), 2012, : 269 - 274
[5] A new Schottky barrier structure of GaN-based ultraviolet photodetector
Zhou Mei
Zuo Shu-Hua
Zhao De-Gang
ACTA PHYSICA SINICA, 2007, 56 (09) : 5513 - 5517
[6] A Simple Passivation Technique for AlGaN/GaN Ultraviolet Schottky Barrier Photodetector
Liu, Han-Yin
Hsu, Wei-Chou
Chou, Bo-Yi
Wang, Yi-Hsuan
IEEE PHOTONICS TECHNOLOGY LETTERS, 2014, 26 (02) : 138 - 141
[7] Investigation of the reverse voltage stress on the fluorine plasma treated AlGaN/GaN Schottky barrier diodes
Zhang, Ya-Song
Cao, Yan-Rong
Li, Peng
Dai, Feng
Zhu, Qing
Lv, Ling
Ma, Xiao-Hua
Hao, Yue
2016 13TH IEEE INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY (ICSICT), 2016, : 1035 - 1037
[8] A β-Ga2O3/GaN Schottky-Barrier Photodetector
Weng, W. Y.
Hsueh, T. J.
Chang, S. J.
Huang, G. J.
Hsueh, H. T.
IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 23 (07) : 444 - 446
[9] Influence of defects in n--GaN layer on the responsivity of Schottky barrier ultraviolet photodetectors
Zhao, D. G.
Jiang, D. S.
Zhu, J. J.
Liu, Z. S.
Zhang, S. M.
Liang, J. W.
Yang, Hui
Li, X.
Li, X. Y.
Gong, H. M.
APPLIED PHYSICS LETTERS, 2007, 90 (06)
[10] UV-A Selective Photo-responsivity in a GaN MSM Photodetector Using ITO Schottky Electrodes
Lee, Chang-Ju
Koo, Gyo-Hun
Kim, Dong-Seok
Yun, Jun-Yeon
Lee, Jung-Hee
Hahm, Sung-Ho
2011 INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC), 2011,

← 1 2 3 4 5 →