We have measured T-1 spin lifetimes of a 14 nm modulation-doped (100) GaAs quantum well using a time-resolved pump-probe Kerr rotation technique. The quantum well was selected by tuning the wavelength of the probe laser. T-1 lifetimes in excess of 1 mu s were measured at 1.5K and 5.5 T, exceeding the typical T-2* lifetimes that have been measured in GaAs and II-VI quantum wells by orders of magnitude. We observed effects from nuclear polarization, which were largely removable by simultaneous nuclear magnetic resonance, along with two distinct lifetimes under some conditions that likely result from probing two differently localized subsets of electrons. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4759320]
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Osaka Univ, Grad Sch Sci, Dept Phys, Toyonaka, Osaka 5600043, JapanOsaka Univ, Grad Sch Sci, Dept Phys, Toyonaka, Osaka 5600043, Japan
Mitamura, T
Nakata, H
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Osaka Univ, Grad Sch Sci, Dept Phys, Toyonaka, Osaka 5600043, JapanOsaka Univ, Grad Sch Sci, Dept Phys, Toyonaka, Osaka 5600043, Japan
Nakata, H
Fujii, K
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Osaka Univ, Grad Sch Sci, Dept Phys, Toyonaka, Osaka 5600043, JapanOsaka Univ, Grad Sch Sci, Dept Phys, Toyonaka, Osaka 5600043, Japan
Fujii, K
Ohyama, T
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Osaka Univ, Grad Sch Sci, Dept Phys, Toyonaka, Osaka 5600043, JapanOsaka Univ, Grad Sch Sci, Dept Phys, Toyonaka, Osaka 5600043, Japan
Ohyama, T
PROCEEDINGS OF THE 10TH INTERNATIONAL CONFERENCE ON NARROW GAP SEMICONDUCTORS AND RELATED SMALL ENERGY PHENOMENA, PHYSICS AND APPLICATIONS,
2001,
2
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